Electron-ion recombination of Si IV forming Si III: Storage-ring measurement and multiconfiguration Dirac-Fock calculations

The electron-ion recombination rate coefficient for Si IV forming Si III was measured at the heavy-ion storage-ring TSR. The experimental electron-ion collision energy range of 0–186 eV encompassed the 2p6nln l dielectronic recombination DR resonances associated with 3s→nl core excitations, 2s2p63snln l resonances associated with 2s→nl n=3,4 core excitations, and 2p53snln l resonances associated with 2p →nl n=3, . . . , core excitations. The experimental DR results are compared with theoretical calculations using the multiconfiguration Dirac-Fock MCDF method for DR via the 3s→3pn l and 3s→3dn l both n =3, . . . ,6 and 2p53s3ln l n =3,4 capture channels. Finally, the experimental and theoretical plasma DR rate coefficients for Si IV forming Si III are derived and compared with previously available results.